Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor

Nonfiction, Science & Nature, Technology, Nanotechnology, Electronics, Circuits
Cover of the book Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor by Iraj Sadegh Amiri, Mahdiar Ghadiry, Springer Singapore
View on Amazon View on AbeBooks View on Kobo View on B.Depository View on eBay View on Walmart
Author: Iraj Sadegh Amiri, Mahdiar Ghadiry ISBN: 9789811065507
Publisher: Springer Singapore Publication: October 29, 2017
Imprint: Springer Language: English
Author: Iraj Sadegh Amiri, Mahdiar Ghadiry
ISBN: 9789811065507
Publisher: Springer Singapore
Publication: October 29, 2017
Imprint: Springer
Language: English

This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (α), and breakdown voltage (BV) of single and double-gate graphene nanoribbon field effect transistors (GNRFETs). The application of Gauss’s law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. LVSR is then calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on the lucky drift theory of ionization. The threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Lastly avalanche breakdown condition is employed to calculate the lateral BV. On the basis of this, simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used to examine BV at different channel lengths, supply voltages, oxide thickness, GNR widths, and gate voltages. Simulation results show that the operating voltage of FETs could be as low as 0.25 V in order to prevent breakdown. However, after optimization, it can go as high as 1.5 V. This work is useful for researchers working in the area of graphene nanoribbon-based transistors.

View on Amazon View on AbeBooks View on Kobo View on B.Depository View on eBay View on Walmart

This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient (α), and breakdown voltage (BV) of single and double-gate graphene nanoribbon field effect transistors (GNRFETs). The application of Gauss’s law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. LVSR is then calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on the lucky drift theory of ionization. The threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Lastly avalanche breakdown condition is employed to calculate the lateral BV. On the basis of this, simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used to examine BV at different channel lengths, supply voltages, oxide thickness, GNR widths, and gate voltages. Simulation results show that the operating voltage of FETs could be as low as 0.25 V in order to prevent breakdown. However, after optimization, it can go as high as 1.5 V. This work is useful for researchers working in the area of graphene nanoribbon-based transistors.

More books from Springer Singapore

Cover of the book E-Democracy for Smart Cities by Iraj Sadegh Amiri, Mahdiar Ghadiry
Cover of the book Biliopancreatic Endoscopy by Iraj Sadegh Amiri, Mahdiar Ghadiry
Cover of the book Forging Connections in Early Mathematics Teaching and Learning by Iraj Sadegh Amiri, Mahdiar Ghadiry
Cover of the book The new Japanese Firm as a Hybrid Organization by Iraj Sadegh Amiri, Mahdiar Ghadiry
Cover of the book Corporate Social Responsibility and Corporate Finance in Japan by Iraj Sadegh Amiri, Mahdiar Ghadiry
Cover of the book Magnetoelastic Waves by Iraj Sadegh Amiri, Mahdiar Ghadiry
Cover of the book Cultural Studies in Modern China by Iraj Sadegh Amiri, Mahdiar Ghadiry
Cover of the book China as a Global Clean Energy Champion by Iraj Sadegh Amiri, Mahdiar Ghadiry
Cover of the book Fundamentals of EM Design of Radar Absorbing Structures (RAS) by Iraj Sadegh Amiri, Mahdiar Ghadiry
Cover of the book Proceedings of the ASEAN Entrepreneurship Conference 2014 by Iraj Sadegh Amiri, Mahdiar Ghadiry
Cover of the book New Technology, Big Data and the Law by Iraj Sadegh Amiri, Mahdiar Ghadiry
Cover of the book Inherited Neurological Disorders by Iraj Sadegh Amiri, Mahdiar Ghadiry
Cover of the book Telecommunication 4.0 by Iraj Sadegh Amiri, Mahdiar Ghadiry
Cover of the book Molecular Aspects of Plant-Pathogen Interaction by Iraj Sadegh Amiri, Mahdiar Ghadiry
Cover of the book Proceedings of the 3rd International Halal Conference (INHAC 2016) by Iraj Sadegh Amiri, Mahdiar Ghadiry
We use our own "cookies" and third party cookies to improve services and to see statistical information. By using this website, you agree to our Privacy Policy