Author: | ISBN: | 9783319487052 | |
Publisher: | Springer International Publishing | Publication: | February 14, 2017 |
Imprint: | Springer | Language: | English |
Author: | |
ISBN: | 9783319487052 |
Publisher: | Springer International Publishing |
Publication: | February 14, 2017 |
Imprint: | Springer |
Language: | English |
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced.
Provides a comprehensive overview of the technology for charge-trapping non-volatile memories;
Details new architectures and current modeling concepts for non-volatile memory devices;
Focuses on conduction through multi-layer gate dielectrics stacks.
This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced.
Provides a comprehensive overview of the technology for charge-trapping non-volatile memories;
Details new architectures and current modeling concepts for non-volatile memory devices;
Focuses on conduction through multi-layer gate dielectrics stacks.