Defect Recognition and Image Processing in Semiconductors 1997
Proceedings of the seventh conference on Defect Recognition and Image Processing, Berlin, September 1997
Nonfiction, Science & Nature, Science, Physics, Solid State Physics, General Physics
| Author: | J. Doneker | ISBN: | 9781351456463 |
| Publisher: | CRC Press | Publication: | November 22, 2017 |
| Imprint: | Routledge | Language: | English |
| Author: | J. Doneker |
| ISBN: | 9781351456463 |
| Publisher: | CRC Press |
| Publication: | November 22, 2017 |
| Imprint: | Routledge |
| Language: | English |
Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.
Defect Recognition and Image Processing in Semiconductors 1997 provides a valuable overview of current techniques used to assess, monitor, and characterize defects from the atomic scale to inhomogeneities in complete silicon wafers. This volume addresses advances in defect analyzing techniques and instrumentation and their application to substrates, epilayers, and devices. The book discusses the merits and limits of characterization techniques; standardization; correlations between defects and device performance, including degradation and failure analysis; and the adaptation and application of standard characterization techniques to new materials. It also examines the impressive advances made possible by the increase in the number of nanoscale scanning techniques now available. The book investigates defects in layers and devices, and examines the problems that have arisen in characterizing gallium nitride and silicon carbide.
