Fundamentals of Modern VLSI Devices
Nonfiction, Science & Nature, Technology, Electronics, Optoelectronics, Science
| Author: | Yuan Taur, Tak H. Ning | ISBN: | 9780511699399 |
| Publisher: | Cambridge University Press | Publication: | May 2, 2013 |
| Imprint: | Cambridge University Press | Language: | English |
| Author: | Yuan Taur, Tak H. Ning |
| ISBN: | 9780511699399 |
| Publisher: | Cambridge University Press |
| Publication: | May 2, 2013 |
| Imprint: | Cambridge University Press |
| Language: | English |
Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.
Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.
