Fundamentals of Nanoscaled Field Effect Transistors

Nonfiction, Science & Nature, Technology, Electronics, Circuits
Cover of the book Fundamentals of Nanoscaled Field Effect Transistors by Amit Chaudhry, Springer New York
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Author: Amit Chaudhry ISBN: 9781461468226
Publisher: Springer New York Publication: April 23, 2013
Imprint: Springer Language: English
Author: Amit Chaudhry
ISBN: 9781461468226
Publisher: Springer New York
Publication: April 23, 2013
Imprint: Springer
Language: English

Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.

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Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.

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