Gallium Nitride and Silicon Carbide Power Devices
Nonfiction, Science & Nature, Technology, Electronics, Semiconductors
| Author: | B Jayant Baliga | ISBN: | 9789813109421 |
| Publisher: | World Scientific Publishing Company | Publication: | December 12, 2016 |
| Imprint: | WSPC | Language: | English |
| Author: | B Jayant Baliga |
| ISBN: | 9789813109421 |
| Publisher: | World Scientific Publishing Company |
| Publication: | December 12, 2016 |
| Imprint: | WSPC |
| Language: | English |
During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.
This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.
Contents:
- Preface
- Introduction
- Material Properties
- Breakdown Voltage
- Ideal Specific On-Resistance
- Schottky Rectifiers
- Shielded Schottky Rectifiers
- P-i-N Rectifiers
- MPS Rectifiers
- Junction Field Effect Transistors
- The Baliga-Pair (Cascode) Configuration
- SiC Planar Power MOSFETs
- SiC Trench-Gate Power MOSFETs
- GaN Vertical Power HFETs
- GaN Lateral Power HFETs
- SiC Bipolar Junction Transistors
- SiC Gate Turn-Off Thyristors
- SiC IGBTs
- Synopsys
- Homework Problems
Readership: Researchers, academics, and graduate students in electrical & electronic engineering, semiconductors, materials engineering and energy research.
During the last 30 years, significant progress has been made to improve our understanding of gallium nitride and silicon carbide device structures, resulting in experimental demonstration of their enhanced performances for power electronic systems. Gallium nitride power devices made by the growth of the material on silicon substrates have gained a lot of interest. Power device products made from these materials have become available during the last five years from many companies.
This comprehensive book discusses the physics of operation and design of gallium nitride and silicon carbide power devices. It can be used as a reference by practicing engineers in the power electronics industry and as a textbook for a power device or power electronics course in universities.
Contents:
- Preface
- Introduction
- Material Properties
- Breakdown Voltage
- Ideal Specific On-Resistance
- Schottky Rectifiers
- Shielded Schottky Rectifiers
- P-i-N Rectifiers
- MPS Rectifiers
- Junction Field Effect Transistors
- The Baliga-Pair (Cascode) Configuration
- SiC Planar Power MOSFETs
- SiC Trench-Gate Power MOSFETs
- GaN Vertical Power HFETs
- GaN Lateral Power HFETs
- SiC Bipolar Junction Transistors
- SiC Gate Turn-Off Thyristors
- SiC IGBTs
- Synopsys
- Homework Problems
Readership: Researchers, academics, and graduate students in electrical & electronic engineering, semiconductors, materials engineering and energy research.
