Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors

Nonfiction, Science & Nature, Technology, Electronics, Optoelectronics, Science
Cover of the book Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors by Farzan Jazaeri, Jean-Michel Sallese, Cambridge University Press
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Author: Farzan Jazaeri, Jean-Michel Sallese ISBN: 9781108581394
Publisher: Cambridge University Press Publication: February 28, 2018
Imprint: Cambridge University Press Language: English
Author: Farzan Jazaeri, Jean-Michel Sallese
ISBN: 9781108581394
Publisher: Cambridge University Press
Publication: February 28, 2018
Imprint: Cambridge University Press
Language: English

The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field.

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The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field.

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