Nanometer CMOS

Nonfiction, Science & Nature, Technology, Material Science, Electronics, Science, Biological Sciences
Cover of the book Nanometer CMOS by Juin J. Liou, Frank Schwierz, Hei Wong, Jenny Stanford Publishing
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Author: Juin J. Liou, Frank Schwierz, Hei Wong ISBN: 9781466511705
Publisher: Jenny Stanford Publishing Publication: February 28, 2010
Imprint: Jenny Stanford Publishing Language: English
Author: Juin J. Liou, Frank Schwierz, Hei Wong
ISBN: 9781466511705
Publisher: Jenny Stanford Publishing
Publication: February 28, 2010
Imprint: Jenny Stanford Publishing
Language: English

This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorough overview of MOSFET physics, detailing the relevant basics. The authors apply presented models to calculate and demonstrate transistor characteristics, and they include required input data (e.g., dimensions, doping) enabling readers to repeat the calculations and compare their results. The book introduces conventional and novel advanced MOSFET concepts, such as multiple-gate structures or alternative channel materials. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.

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This book presents the material necessary for understanding the physics, operation, design, and performance of modern MOSFETs with nanometer dimensions. It offers a brief introduction to the field and a thorough overview of MOSFET physics, detailing the relevant basics. The authors apply presented models to calculate and demonstrate transistor characteristics, and they include required input data (e.g., dimensions, doping) enabling readers to repeat the calculations and compare their results. The book introduces conventional and novel advanced MOSFET concepts, such as multiple-gate structures or alternative channel materials. Other topics covered include high-k dielectrics and mobility enhancement techniques, MOSFETs for RF (radio frequency) applications, MOSFET fabrication technology.

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