Author: | Yue Hao, Jin Feng Zhang, Jin Cheng Zhang | ISBN: | 9781315351834 |
Publisher: | CRC Press | Publication: | November 3, 2016 |
Imprint: | CRC Press | Language: | English |
Author: | Yue Hao, Jin Feng Zhang, Jin Cheng Zhang |
ISBN: | 9781315351834 |
Publisher: | CRC Press |
Publication: | November 3, 2016 |
Imprint: | CRC Press |
Language: | English |
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.