Silicon Nanoelectronics

Nonfiction, Science & Nature, Technology, Nanotechnology, Electricity
Cover of the book Silicon Nanoelectronics by , CRC Press
View on Amazon View on AbeBooks View on Kobo View on B.Depository View on eBay View on Walmart
Author: ISBN: 9781351836746
Publisher: CRC Press Publication: December 19, 2017
Imprint: CRC Press Language: English
Author:
ISBN: 9781351836746
Publisher: CRC Press
Publication: December 19, 2017
Imprint: CRC Press
Language: English

Technological advancement in chip development, primarily based on the downscaling of the feature size of transistors, is threatening to come to a standstill as we approach the limits of conventional scaling. For example, when the number of electrons in a device's active region is reduced to less than ten electrons (or holes), quantum fluctuation errors will occur, and when gate insulator thickness becomes too insignificant to block quantum mechanical tunneling, unacceptable leakage will occur. Fortunately, there is truth in the old adage that whenever a door closes, a window opens somewhere else. In this case, that window opening is nanotechnology.

Silicon Nanoelectronics takes a look at at the recent development of novel devices and materials that hold great promise for the creation of still smaller and more powerful chips. Silicon nanodevices are positoned to be particularly relevant in consideration of the existing silicon process infrastructure already in place throughout the semiconductor industry and silicon's consequent compatibility with current CMOS circuits. This is reinforced by the nearly perfect interface that can exist between natural oxide and silicon.

Presenting the contributions of more than 20 leading academic and corporate researchers from the United States and Japan, Silicon Nanoelectronics offers a comprehensive look at this emergent technology. The text includes extensive background information on the physics of silicon nanodevices and practical CMOS scaling. It considers such issues as quantum effects and ballistic transport and resonant tunneling in silicon nanotechnology. A significant amount of attention is given to the all-important silicon single electron transistors and the devices that utilize them.

In offering an update of the current state-of-the-art in the field of silicon nanoelectronics, this volume serves well as a concise reference for students, scientists, engineers, and specialists in various fields, in

View on Amazon View on AbeBooks View on Kobo View on B.Depository View on eBay View on Walmart

Technological advancement in chip development, primarily based on the downscaling of the feature size of transistors, is threatening to come to a standstill as we approach the limits of conventional scaling. For example, when the number of electrons in a device's active region is reduced to less than ten electrons (or holes), quantum fluctuation errors will occur, and when gate insulator thickness becomes too insignificant to block quantum mechanical tunneling, unacceptable leakage will occur. Fortunately, there is truth in the old adage that whenever a door closes, a window opens somewhere else. In this case, that window opening is nanotechnology.

Silicon Nanoelectronics takes a look at at the recent development of novel devices and materials that hold great promise for the creation of still smaller and more powerful chips. Silicon nanodevices are positoned to be particularly relevant in consideration of the existing silicon process infrastructure already in place throughout the semiconductor industry and silicon's consequent compatibility with current CMOS circuits. This is reinforced by the nearly perfect interface that can exist between natural oxide and silicon.

Presenting the contributions of more than 20 leading academic and corporate researchers from the United States and Japan, Silicon Nanoelectronics offers a comprehensive look at this emergent technology. The text includes extensive background information on the physics of silicon nanodevices and practical CMOS scaling. It considers such issues as quantum effects and ballistic transport and resonant tunneling in silicon nanotechnology. A significant amount of attention is given to the all-important silicon single electron transistors and the devices that utilize them.

In offering an update of the current state-of-the-art in the field of silicon nanoelectronics, this volume serves well as a concise reference for students, scientists, engineers, and specialists in various fields, in

More books from CRC Press

Cover of the book Nonlinear Partial Differential Equations in Engineering and Applied Science by
Cover of the book Winning Ways for Your Mathematical Plays by
Cover of the book 3D Integration in VLSI Circuits by
Cover of the book Hazardous Building Materials by
Cover of the book Value Management in Design and Construction by
Cover of the book Introduction to Chemical Graph Theory by
Cover of the book Radiation Effects in Semiconductors by
Cover of the book Green Building Handbook: Volume 2 by
Cover of the book Water-Insoluble Drug Formulation by
Cover of the book Microprocessor Technology by
Cover of the book Handbook of IoT and Big Data by
Cover of the book A Unified Algebraic Approach To Control Design by
Cover of the book Upgrading Residues and By-products for Animals by
Cover of the book Physiology of Rubber Tree Latex by
Cover of the book The African Neogene - Climate, Environments and People by
We use our own "cookies" and third party cookies to improve services and to see statistical information. By using this website, you agree to our Privacy Policy