Wide Band Gap Semiconductor Nanowires 2

Heterostructures and Optoelectronic Devices

Nonfiction, Science & Nature, Technology, Electronics, Semiconductors
Cover of the book Wide Band Gap Semiconductor Nanowires 2 by Robert Baptist, Wiley
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Author: Robert Baptist ISBN: 9781118984284
Publisher: Wiley Publication: August 8, 2014
Imprint: Wiley-ISTE Language: English
Author: Robert Baptist
ISBN: 9781118984284
Publisher: Wiley
Publication: August 8, 2014
Imprint: Wiley-ISTE
Language: English

This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires.

Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and GaN, but also with different chemical and physical synthesis methods, will bring valuable comparisons in order to gain a general approach for the growth of wide band gap nanowires applied to optical devices

View on Amazon View on AbeBooks View on Kobo View on B.Depository View on eBay View on Walmart

This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires.

Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and GaN, but also with different chemical and physical synthesis methods, will bring valuable comparisons in order to gain a general approach for the growth of wide band gap nanowires applied to optical devices

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