Wide Bandgap Semiconductor Power Devices

Materials, Physics, Design, and Applications

Nonfiction, Science & Nature, Technology, Material Science, Electronics
Cover of the book Wide Bandgap Semiconductor Power Devices by , Elsevier Science
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Author: ISBN: 9780081023075
Publisher: Elsevier Science Publication: October 17, 2018
Imprint: Woodhead Publishing Language: English
Author:
ISBN: 9780081023075
Publisher: Elsevier Science
Publication: October 17, 2018
Imprint: Woodhead Publishing
Language: English

Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed.

  • Comprehensively covers power electronic devices, including materials (both gallium nitride and silicon carbide), physics, design considerations, and the most promising applications
  • Addresses the key challenges towards the realization of wide bandgap power electronic devices, including materials defects, performance and reliability
  • Provides the benefits of wide bandgap semiconductors, including opportunities for cost reduction and social impact
View on Amazon View on AbeBooks View on Kobo View on B.Depository View on eBay View on Walmart

Wide Bandgap Semiconductor Power Devices: Materials, Physics, Design and Applications provides readers with a single resource on why these devices are superior to existing silicon devices. The book lays the groundwork for an understanding of an array of applications and anticipated benefits in energy savings. Authored by the Founder of the Power Semiconductor Research Center at North Carolina State University (and creator of the IGBT device), Dr. B. Jayant Baliga is one of the highest regarded experts in the field. He thus leads this team who comprehensively review the materials, device physics, design considerations and relevant applications discussed.

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