Power Microelectronics

Device and Process Technologies

Nonfiction, Science & Nature, Technology, Electronics, Microelectronics, Circuits
Cover of the book Power Microelectronics by Yung C Liang, Ganesh S Samudra, Chih-Fang Huang, World Scientific Publishing Company
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Author: Yung C Liang, Ganesh S Samudra, Chih-Fang Huang ISBN: 9789813200265
Publisher: World Scientific Publishing Company Publication: March 14, 2017
Imprint: WSPC Language: English
Author: Yung C Liang, Ganesh S Samudra, Chih-Fang Huang
ISBN: 9789813200265
Publisher: World Scientific Publishing Company
Publication: March 14, 2017
Imprint: WSPC
Language: English

This descriptive textbook provides a clear look at the theories and process technologies necessary for understanding the modern power semiconductor devices, i.e. from the fundamentals of p-n junction electrostatics, unipolar MOSFET and superjunction structures, bipolar IGBT, to the most recent wide bandgap SiC and GaN devices. It also covers their associated semiconductor process technologies. Real examples based on actual fabricated devices, with the process steps described in clear detail are especially useful. This book is suitable for university courses on power semiconductor or power electronic devices. Device designers and researchers will also find this book a good reference in their work, especially for those focusing on the advanced device development and design aspects.

Contents:

  • Introduction
  • Carrier Physics and Junction Electrostatics
  • Bipolar Junction Diode
  • Power Metal–Oxide–Semiconductor Field-Effect Transistor
  • Insulated-Gate Bipolar Transistor
  • Superjunction Structures
  • Silicon Carbide Power Devices
  • Gallium Nitride Power Devices
  • Fabrication and Modeling of Power Devices
  • Practical Case Studies in Silicon Power Devices
  • Practical Case Studies in Wide Bandgap Power Devices

Readership: Researchers, academics, professionals, final-year undergraduate and graduate students in circuits & systems and electrical & electronic engineering.

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This descriptive textbook provides a clear look at the theories and process technologies necessary for understanding the modern power semiconductor devices, i.e. from the fundamentals of p-n junction electrostatics, unipolar MOSFET and superjunction structures, bipolar IGBT, to the most recent wide bandgap SiC and GaN devices. It also covers their associated semiconductor process technologies. Real examples based on actual fabricated devices, with the process steps described in clear detail are especially useful. This book is suitable for university courses on power semiconductor or power electronic devices. Device designers and researchers will also find this book a good reference in their work, especially for those focusing on the advanced device development and design aspects.

Contents:

Readership: Researchers, academics, professionals, final-year undergraduate and graduate students in circuits & systems and electrical & electronic engineering.

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