The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

Nonfiction, Science & Nature, Technology, Electronics, Semiconductors, Circuits
Cover of the book The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices by Zhiqiang Li, Springer Berlin Heidelberg
View on Amazon View on AbeBooks View on Kobo View on B.Depository View on eBay View on Walmart
Author: Zhiqiang Li ISBN: 9783662496831
Publisher: Springer Berlin Heidelberg Publication: March 24, 2016
Imprint: Springer Language: English
Author: Zhiqiang Li
ISBN: 9783662496831
Publisher: Springer Berlin Heidelberg
Publication: March 24, 2016
Imprint: Springer
Language: English

This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With  adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced  source/drain parasitic resistance is demonstrated in the  fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.

View on Amazon View on AbeBooks View on Kobo View on B.Depository View on eBay View on Walmart

This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With  adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced  source/drain parasitic resistance is demonstrated in the  fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.

More books from Springer Berlin Heidelberg

Cover of the book Akustische Messtechnik by Zhiqiang Li
Cover of the book Study of the Calcium Regulation Mechanism of TCR Activation Using Nanodisc and NMR Technologies by Zhiqiang Li
Cover of the book CSR und Lebensmittelwirtschaft by Zhiqiang Li
Cover of the book Organic Acids in Geological Processes by Zhiqiang Li
Cover of the book The Silver Market Phenomenon by Zhiqiang Li
Cover of the book MicroRNAs in Plant Development and Stress Responses by Zhiqiang Li
Cover of the book Laron Syndrome - From Man to Mouse by Zhiqiang Li
Cover of the book Strategic Management of Professional Service Firms by Zhiqiang Li
Cover of the book Brustkrebs – Hilfe im Bürokratie-Dschungel by Zhiqiang Li
Cover of the book Environmental Management of Solid Waste by Zhiqiang Li
Cover of the book Breath Odors by Zhiqiang Li
Cover of the book Multi-Layer Potentials and Boundary Problems by Zhiqiang Li
Cover of the book Internal Ear Angioarchitectonic of Serpents by Zhiqiang Li
Cover of the book Novel Insights into Adipose Cell Functions by Zhiqiang Li
Cover of the book Radiological Interventions in Obstetrics and Gynaecology by Zhiqiang Li
We use our own "cookies" and third party cookies to improve services and to see statistical information. By using this website, you agree to our Privacy Policy