Transport in Metal-Oxide-Semiconductor Structures

Mobile Ions Effects on the Oxide Properties

Nonfiction, Science & Nature, Technology, Electronics, Semiconductors, Material Science
Cover of the book Transport in Metal-Oxide-Semiconductor Structures by Hamid Bentarzi, Springer Berlin Heidelberg
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Author: Hamid Bentarzi ISBN: 9783642163043
Publisher: Springer Berlin Heidelberg Publication: January 12, 2011
Imprint: Springer Language: English
Author: Hamid Bentarzi
ISBN: 9783642163043
Publisher: Springer Berlin Heidelberg
Publication: January 12, 2011
Imprint: Springer
Language: English

This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.

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This book focuses on the importance of mobile ions presented in oxide structures, what significantly affects the metal-oxide-semiconductor (MOS) properties. The reading starts with the definition of the MOS structure, its various aspects and different types of charges presented in their structure. A review on ionic transport mechanisms and techniques for measuring the mobile ions concentration in the oxides is given, special attention being attempted to the Charge Pumping (CP) technique associated with the Bias Thermal Stress (BTS) method. Theoretical approaches to determine the density of mobile ions as well as their distribution along the oxide thickness are also discussed. The content varies from general to very specific examples, helping the reader to learn more about transport in MOS structures.

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