Feature Profile Evolution in Plasma Processing Using On-wafer Monitoring System

Nonfiction, Science & Nature, Science, Other Sciences, Nanostructures, Technology, Nanotechnology
Cover of the book Feature Profile Evolution in Plasma Processing Using On-wafer Monitoring System by Seiji Samukawa, Springer Japan
View on Amazon View on AbeBooks View on Kobo View on B.Depository View on eBay View on Walmart
Author: Seiji Samukawa ISBN: 9784431547952
Publisher: Springer Japan Publication: January 28, 2014
Imprint: Springer Language: English
Author: Seiji Samukawa
ISBN: 9784431547952
Publisher: Springer Japan
Publication: January 28, 2014
Imprint: Springer
Language: English

This book provides for the first time a good understanding of the etching profile technologies that do not disturb the plasma. Three types of sensors are introduced: on-wafer UV sensors, on-wafer charge-up sensors and on-wafer sheath-shape sensors in the plasma processing and prediction system of real etching profiles based on monitoring data. Readers are made familiar with these sensors, which can measure real plasma process surface conditions such as defect generations due to UV-irradiation, ion flight direction due to charge-up voltage in high-aspect ratio structures and ion sheath conditions at the plasma/surface interface. The plasma etching profile realistically predicted by a computer simulation based on output data from these sensors is described.

View on Amazon View on AbeBooks View on Kobo View on B.Depository View on eBay View on Walmart

This book provides for the first time a good understanding of the etching profile technologies that do not disturb the plasma. Three types of sensors are introduced: on-wafer UV sensors, on-wafer charge-up sensors and on-wafer sheath-shape sensors in the plasma processing and prediction system of real etching profiles based on monitoring data. Readers are made familiar with these sensors, which can measure real plasma process surface conditions such as defect generations due to UV-irradiation, ion flight direction due to charge-up voltage in high-aspect ratio structures and ion sheath conditions at the plasma/surface interface. The plasma etching profile realistically predicted by a computer simulation based on output data from these sensors is described.

More books from Springer Japan

Cover of the book Brain-Grounded Theory of Temporal and Spatial Design by Seiji Samukawa
Cover of the book Neutrino Oscillations by Seiji Samukawa
Cover of the book Polyamines by Seiji Samukawa
Cover of the book New Principles in Developmental Processes by Seiji Samukawa
Cover of the book Chronic Inflammation by Seiji Samukawa
Cover of the book Mental Health and Social Issues Following a Nuclear Accident by Seiji Samukawa
Cover of the book Atlas of Exocrine Pancreatic Tumors by Seiji Samukawa
Cover of the book Veins by Seiji Samukawa
Cover of the book Sustainable Urban Transport in an Asian Context by Seiji Samukawa
Cover of the book Methods in Neuroethological Research by Seiji Samukawa
Cover of the book Defects and Impurities in Silicon Materials by Seiji Samukawa
Cover of the book Geomorphology and Society by Seiji Samukawa
Cover of the book Joint Surgery Up to Date by Seiji Samukawa
Cover of the book THz Technology Applied to Cultural Heritage in Practice by Seiji Samukawa
Cover of the book Disaster Risk Reduction Approaches in Bangladesh by Seiji Samukawa
We use our own "cookies" and third party cookies to improve services and to see statistical information. By using this website, you agree to our Privacy Policy