Feature Profile Evolution in Plasma Processing Using On-wafer Monitoring System

Nonfiction, Science & Nature, Science, Other Sciences, Nanostructures, Technology, Nanotechnology
Cover of the book Feature Profile Evolution in Plasma Processing Using On-wafer Monitoring System by Seiji Samukawa, Springer Japan
View on Amazon View on AbeBooks View on Kobo View on B.Depository View on eBay View on Walmart
Author: Seiji Samukawa ISBN: 9784431547952
Publisher: Springer Japan Publication: January 28, 2014
Imprint: Springer Language: English
Author: Seiji Samukawa
ISBN: 9784431547952
Publisher: Springer Japan
Publication: January 28, 2014
Imprint: Springer
Language: English

This book provides for the first time a good understanding of the etching profile technologies that do not disturb the plasma. Three types of sensors are introduced: on-wafer UV sensors, on-wafer charge-up sensors and on-wafer sheath-shape sensors in the plasma processing and prediction system of real etching profiles based on monitoring data. Readers are made familiar with these sensors, which can measure real plasma process surface conditions such as defect generations due to UV-irradiation, ion flight direction due to charge-up voltage in high-aspect ratio structures and ion sheath conditions at the plasma/surface interface. The plasma etching profile realistically predicted by a computer simulation based on output data from these sensors is described.

View on Amazon View on AbeBooks View on Kobo View on B.Depository View on eBay View on Walmart

This book provides for the first time a good understanding of the etching profile technologies that do not disturb the plasma. Three types of sensors are introduced: on-wafer UV sensors, on-wafer charge-up sensors and on-wafer sheath-shape sensors in the plasma processing and prediction system of real etching profiles based on monitoring data. Readers are made familiar with these sensors, which can measure real plasma process surface conditions such as defect generations due to UV-irradiation, ion flight direction due to charge-up voltage in high-aspect ratio structures and ion sheath conditions at the plasma/surface interface. The plasma etching profile realistically predicted by a computer simulation based on output data from these sensors is described.

More books from Springer Japan

Cover of the book Evolution and Senses by Seiji Samukawa
Cover of the book Respiration and Emotion by Seiji Samukawa
Cover of the book Physical Activity, Exercise, Sedentary Behavior and Health by Seiji Samukawa
Cover of the book Perinatal Thrombosis and Hemostasis by Seiji Samukawa
Cover of the book Systems Science for Complex Policy Making by Seiji Samukawa
Cover of the book Autonomous Control Systems and Vehicles by Seiji Samukawa
Cover of the book Acetic Acid Bacteria by Seiji Samukawa
Cover of the book Atlas of Exocrine Pancreatic Tumors by Seiji Samukawa
Cover of the book Climate Change, Agriculture and Rural Livelihoods in Developing Countries by Seiji Samukawa
Cover of the book Neuroimmunological Diseases by Seiji Samukawa
Cover of the book Livelihood Security in Northwestern Himalaya by Seiji Samukawa
Cover of the book Marginal Donors by Seiji Samukawa
Cover of the book Hepatitis C Virus I by Seiji Samukawa
Cover of the book Finite Sample Analysis in Quantum Estimation by Seiji Samukawa
Cover of the book Topical Themes in Energy and Resources by Seiji Samukawa
We use our own "cookies" and third party cookies to improve services and to see statistical information. By using this website, you agree to our Privacy Policy